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| BPW78 Vishay Telefunken Silicon NPN Phototransistor Description BPW78 is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (lp > 850nm). Features D D D D D D D D D Plastic case with IR filter Suitable for near infrared radiation High radiant sensitivity Super flat sideview case with spherical lens Lens integrated Irradiation direction vertical to mounting direction Angle of half sensitivity = 25 Selected into sensitivity groups Compatibel with CQX48 94 8487 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 32 5 100 200 150 100 -55...+100 260 400 Unit V V mA mA mW C C C K/W tp/T = 0.5, tp 10 ms Tamb 40 C x x t x5s Document Number 81528 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) BPW78 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Emitter Collector Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Symbol V(BR)CE O Min 32 5 Typ Max Unit V V V(BR)EC O ICEO CCEO Ee = 1 mW/cm2, l = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W VS = 5 V, IC = 5 mA, RL = 100 W lp l0.5 ton toff fc 1 6 25 920 850...980 100 VCEsat 6 5 110 0.3 nA pF deg nm nm V ms ms kHz Type Dedicated Characteristics Tamb = 25_C Parameter Test Conditions Collector Light Current VCE=5 V, Ee=1 mW/cm2, lp=950 nm Type BPW78A BPW78B Symbol Ica Ica Min 1 2 Typ 2 4 Max 3 Unit mA mA Typical Characteristics (Tamb = 25_C unless otherwise specified) 200 P tot - Total Power Dissipation ( mW ) 160 I CEO - Collector Dark Current ( nA ) 104 103 VCE = 10V 102 120 RthJA 80 40 0 0 20 40 60 80 100 101 100 20 94 8249 40 60 80 100 94 8259 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 81528 Rev. 2, 20-May-99 BPW78 Vishay Telefunken 2.0 I ca rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 C CEO - Collector Emitter Capacitance ( pF ) 20 16 f=1MHz VCE=5V Ee=1mW/cm2 l=950nm 12 8 4 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) 20 40 60 80 100 94 8247 Tamb - Ambient Temperature ( C ) Figure 3. Relative Collector Current vs. Ambient Temperature t on / t off - Turn on / Turn off Time ( m s ) 10 Ica - Collector Light Current ( mA ) Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage 12 10 8 6 4 2 0 ton VCE=5V RL=100W 1 BPW 78 B BPW 78 A l=950nm 0.1 VCE=5V l=950nm 0.01 0.01 toff 0.1 Ee - Irradiance ( 1 mW / cm2 ) 10 94 8253 0 4 8 12 16 94 8251 IC - Collector Current ( mA ) Figure 4. Relative Radiant Sensitivity vs. Angular Displacement 10 Ica - Collector Light Current ( mA ) Figure 7. Turn On/Turn Off Time vs. Collector Current S ( l ) rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 700 l=950nm Ee=1 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.1 0.1 1 10 100 800 94 8252 VCE - Collector Emitter Voltage ( V ) 94 8270 l - Wavelength ( nm ) 900 1000 1100 Figure 5. Collector Light Current vs. Collector Emitter Voltage Figure 8. Relative Spectral Sensitivity vs. Wavelength Document Number 81528 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) BPW78 Vishay Telefunken 0 10 20 30 S rel - Relative Sensitivity 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8254 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement Dimensions in mm 96 12193 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 81528 Rev. 2, 20-May-99 BPW78 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81528 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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